IGBT Chip 600V 150A Trench Field Stop Technology 8 Inch IGBT Wafer Bare Die High Yield for Power Drives
Price varies depending on material, logo, quantity and customization requirements.
Introduction
| Type | IGBT | Application | Power drives |
| Package Type | Bare Die | Media Available | Datasheet, Photo |
| Supplier Type | Original Manufacturer, ODM | Package / Case | bare die |
| Description | 600V Trench & Field stop technology, Low switching losses, Easy paralleling, Positive temperature coefficient | Manufacturer Part Number | AKGW150T60 |
| Operating Temperature | -40℃~+150℃ | Current - Collector (Ic) (Max) | 150A |
| Voltage - Collector Emitter Breakdown (max) | 600V | Vce Saturation (Max) @ Ib, Ic | 2.2V |
| Current Rating (Amps) | 150A | Voltage - Rated | 600V |
| IGBT Type | Trench & Field stop technology | Transistor Type | IGBT wafer |
| Mounting Type | built-in | Wafer Size | 200mm |
| Wafer Thickness | 65um | Max. possible chips per wafer | 320 |
| Die Size | 9.69*7.87mm2 | DC collector current | 150A |
| VCE(sat) at Ic=110A | 1.8-2.2V | Collector-Emitter voltage | 600V |
| VGE(th) @IC=2.34mA | 5.1-6.3V | Input capacitance @VCE=25V | 9.0nF |
| Gate-Emitter leakage current | 150nA |
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