IGBT Wafer 1200V 50A NPT Process Transistor Chip 6 Inch Wafer Bare Die High Yield Steel Bar for Welding Machine
Price varies depending on material, logo, quantity and customization requirements.
Introduction
| Type | IGBT | Application | Welding Machine and cutting machine |
| Package Type | Bare Die | Media Available | Datasheet, Photo |
| Supplier Type | Original Manufacturer, ODM | Package / Case | bare die |
| Description | Non Punch Through (NPT) technology, Positive Vce(sat) Temperature Coefficient, Ultra Fast IGBT, Short Circuit Rated | Manufacturer Part Number | AKGW50N120H |
| Operating Temperature | -40℃~+150℃ | Current - Collector (Ic) (Max) | 50A |
| Voltage - Collector Emitter Breakdown (max) | 1200V | Vce Saturation (Max) @ Ib, Ic | 3.3V |
| Current Rating (Amps) | 50A | Voltage - Rated | 1200V |
| IGBT Type | Non Punch Through (NPT) | Transistor Type | IGBT wafer |
| Mounting Type | built-in | Wafer Size | 150mm |
| Wafer Thickness | 180um | Max. possible chips per wafer | 154 |
| Die Size | 7.75*9.91mm2 | DC collector current | 50A |
| VCE(sat) at Ic=40A | 2.6-3.3V | Collector-Emitter voltage | 1200V |
| VGE(th) | 5-6V | Die bond | Soft solder |
| Collector-emitter cut-off current | 20uA |
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- Stable production system ensuring consistent quality, dependable supply, and standardized manufacturing management;
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- OEM & customization support based on drawings, samples, or specific technical requirements;
- Flexible packaging solutions to ensure safe handling and transportation of products;
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